elektronische bauelemente SSN3139K -0.66 a, -20 v, r ds(on) 520 m ?? p channel enhancement mosfet 12-mar-2014 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low on-resistance ? fast switching speed ? drive circuits can be simple ? parallel use is easy ? low voltage drive makes this device ideal for portable equipment application ? interfacing ? switching marking package information package mpq leader size sot-723 8k 7 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -20 v gate-source voltage v gs 6 v continuous drain current 1 i d -0.66 a pulsed drain current (tp=10 s) i dm -1.2 a total power dissipation 1 p d 150 mw thermal resistance junction-ambient 1 r ja 833 c / w lead temperature for soldering purposes (1/8? from case for 10s) t l 260 c operating junction & stor age temperature range t j , t stg 150, -55~150 c notes: 1. surface mounted on fr4 board using the minimum recommended pad size sot-723 millimete r millimete r ref. min. max. ref. min. max. a 1.150 1.250 f 0.170 0.270 b 0.750 0.850 g 0.270 0.370 c - 0.500 h 0 0.050 d 1.150 1.250 i - 0.150 e 0.800typ. kd ? gate ? source ? drain top view
elektronische bauelemente SSN3139K -0.66 a, -20 v, r ds(on) 520 m ?? p channel enhancement mosfet 12-mar-2014 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss -20 - - v v gs =0, i d = -250 a zero gate voltage drain current i dss - - -1 a v ds = -20v, v gs =0 gate-body leakage current i gss - - 20 a v ds =0, v gs =12v gate threshold voltage 1 v gs(th) -0.35 - -0.8 v v ds = v gs , i d = -250 a - - 520 v gs = -4.5v, i d =1a - - 700 v gs = -2.5v, i d = -0.8a drain-source on-resistance 1 r ds(on) - - 950 m ? v gs = -1.8v, i d = -0.5a forward transconductance 1 g fs - 1.2 - s v ds = -10v, i d = -0.54a diode forward voltage v sd - - -1.2 v i s = -0.5a, v ds =0 dynamic characteristics 3 input capacitance c iss - 113 - output capacitance c oss - 15 - reverse transfer capacitance c rss - 9 - pf v ds = -16v, v gs =0, f=1mhz switching characteristics 3 turn-on delay time 2 t d(on) - 9 - rise time 2 t r - 5.8 - turn-off delay time 2 t d(off) - 32.7 - fall time 2 t f - 20.3 - ns v ds = -10v i d = -200ma v gs = -4.5v r gen =10 ? notes: 1. pulse test : pulse width=300s, duty cycle=2%. 2. switching characteristics are independent of operating junction temperatures. 3. guaranteed by design, not subject to producting.
elektronische bauelemente SSN3139K -0.66 a, -20 v, r ds(on) 520 m ?? p channel enhancement mosfet 12-mar-2014 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. typical characteristics
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